BCX5210TA

Diodes Incorporated
BCX5210TA
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Description
  • brand: Diodes Incorporated
  • weight: 10.00 g
  • DC Collector/Base Gain hfe Min: 63 at 150 mA, 2 V
  • Gain Bandwidth Product fT: 150 MHz
  • Emitter- Base Voltage VEBO: 5 V
  • Maximum DC Collector Current: 1 A
  • Transistor Polarity: PNP
  • Collector- Emitter Voltage VCEO Max: 60 V
  • Mounting Style: SMD/SMT
  • Pd - Power Dissipation: 1000 mW
  • Length: 4.5 mm
  • Brand: Diodes Incorporated
  • Series: BCX52
  • Minimum Operating Temperature: - 65 C
  • Manufacturer: Diodes Incorporated
  • Subcategory: Transistors
  • Product Type: BJTs - Bipolar Transistors
  • Package / Case: SOT-89-3
  • Maximum Operating Temperature: + 150 C
  • Factory Pack Quantity: 1000
  • Packaging: Reel
  • Product Category: Bipolar Transistors - BJT
  • Technology: Si
  • Width: 2.5 mm
  • Height: 1.5 mm
  • Unit Weight: 0.001834 oz
  • Configuration: Single
  • DataSheet: BCX5210TA.pdf
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K

Product Detail