FQU4N50TU-WS

ON Semiconductor
FQU4N50TU-WS
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Description
  • brand: ON Semiconductor
  • weight: 10.00 g
  • Rds On - Drain-Source Resistance: 2.7 Ohms
  • Vds - Drain-Source Breakdown Voltage: 500 V
  • Transistor Polarity: N-Channel
  • Typical Turn-Off Delay Time: 20 ns
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Typical Turn-On Delay Time: 12 ns
  • Transistor Type: 1 N-Channel
  • Qg - Gate Charge: 13 nC
  • Channel Mode: Enhancement
  • Id - Continuous Drain Current: 2.6 A
  • Mounting Style: Through Hole
  • Part # Aliases: FQU4N50TU_WS
  • Pd - Power Dissipation: 2.5 W
  • Length: 6.8 mm
  • Rise Time: 45 ns
  • Fall Time: 30 ns
  • Number of Channels: 1 Channel
  • Brand: ON Semiconductor / Fairchild
  • Series: FQU4N50TU_WS
  • Minimum Operating Temperature: - 55 C
  • Manufacturer: ON Semiconductor
  • Subcategory: MOSFETs
  • Product Type: MOSFET
  • Package / Case: TO-251-3
  • Maximum Operating Temperature: + 150 C
  • Factory Pack Quantity: 5040
  • Packaging: Tube
  • Product Category: MOSFET
  • Technology: Si
  • Width: 2.5 mm
  • Height: 6.3 mm
  • Unit Weight: 0.012102 oz
  • Tradename: QFET
  • Configuration: Single
  • DataSheet: FQU4N50TU-WS.pdf
MOSFET N-CH/500V 2.6A/2.7OHM

Product Detail