PD85025-E
Description
- brand: STMicroelectronics
- weight: 10.00 g
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: N-Channel
- Vgs - Gate-Source Voltage: 15 V
- Channel Mode: Enhancement
- Id - Continuous Drain Current: 7 A
- Mounting Style: SMD/SMT
- Operating Frequency: 1 GHz
- Pd - Power Dissipation: 79 W
- Length: 9.4 mm
- Type: RF Power MOSFET
- Output Power: 25 W
- Brand: STMicroelectronics
- Series: PD85025-E
- Minimum Operating Temperature: - 65 C
- Manufacturer: STMicroelectronics
- Subcategory: MOSFETs
- Product Type: RF MOSFET Transistors
- Package / Case: PowerSO-10RF-Formed-4
- Maximum Operating Temperature: + 150 C
- Factory Pack Quantity: 400
- Packaging: Tube
- Product Category: RF MOSFET Transistors
- Technology: Si
- Width: 7.5 mm
- Height: 3.5 mm
- Unit Weight: 0.105822 oz
- Moisture Sensitive: Yes
- Gain: 15.7 dB
- Configuration: Single
-
DataSheet:
PD85025-E.pdf
Product Detail
